“Phase Change” memory is announced and graphene transistors are successfully created. All on today’s On This Day from TEST Huddle.
2006 – “Phase Change” Memory
In the U.S. scientists from IBM, Macronix, and Qimonda announce that they have developed a material that makes “phase-change” memory. This new material will allow actions to occur 500 to 1,000 times faster than current flash memory in addition to using half as much power. After the announcement both Intel and Samsung announce that the company will products featuring the material in the coming years. As of today, Phase Change or PRAM memory is gaining in popularity and in research.
2008 – Graphene Transistors are successfully created
IBM announces that it has successfully created graphene transistors capable of running at 26GHz. Graphene transistors are seen as potentially the future basis for building microprocessors and could potentially allow speeds up to some hundred times faster than currently occurs with silicon.
Images: Neowin.net, BBC
